Datasheet4U Logo Datasheet4U.com

RUH1H100R - N-Channel Advanced Power MOSFET

Description

GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 30

Features

  • 100V/100A, RDS (ON) =5.2mΩ(Typ. )@VGS=10V.
  • Advanced HEFET® Technology.
  • Ultra Low On-Resistance.
  • Excellent QgxRDS(on) Product.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet preview – RUH1H100R

Datasheet Details

Part number RUH1H100R
Manufacturer Ruichips
File Size 364.02 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH1H100R Datasheet
Additional preview pages of the RUH1H100R datasheet.

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RUH1H150S - N-Channel Advanced Power MOSFET
  • RUH1H80M - N-Channel Advanced Power MOSFET
  • RUH1H9H - N-Channel Advanced Power MOSFET
  • RUH30100M - N-Channel Advanced Power MOSFET
  • RUH3051L - N-Channel Advanced Power MOSFET
  • RUH3051M - N-Channel Advanced Power MOSFET
  • RUH3090L - N-Channel Advanced Power MOSFET
  • RUH30J30M - Dual N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RUH1H100R N-Channel Advanced Power MOSFET Features • 100V/100A, RDS (ON) =5.2mΩ(Typ.
Published: |