RUH1H9H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RUH1H9H n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RUH1H9H
Manufacturer	Ruichips
File Size	268.33 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RUH1H9H Datasheet

General Description

D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Singl

Overview

RUH1H9H N-Channel Advanced Power MOSFET.

Key Features

100V/9A, RDS (ON) =17mΩ(Typ. )@VGS=10V.
Advanced HEFET® Technology.
Ultra Low On-Resistance.
Excellent QgxRDS(on) Product.
Optimized for fast-switching.

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