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RUH1H9H - N-Channel Advanced Power MOSFET

Description

D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large

Features

  • 100V/9A, RDS (ON) =17mΩ(Typ. )@VGS=10V.
  • Advanced HEFET® Technology.
  • Ultra Low On-Resistance.
  • Excellent QgxRDS(on) Product.
  • Optimized for fast-switching.

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Datasheet Details

Part number RUH1H9H
Manufacturer Ruichips
File Size 268.33 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH1H9H Datasheet
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Full PDF Text Transcription

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RUH1H9H N-Channel Advanced Power MOSFET Features • 100V/9A, RDS (ON) =17mΩ(Typ.
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