Datasheet Details
| Part number | RUH1H150S |
|---|---|
| Manufacturer | Ruichips |
| File Size | 1.22 MB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RUH1H150S Datasheet
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| Part number | RUH1H150S |
|---|---|
| Manufacturer | Ruichips |
| File Size | 1.22 MB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
RUH1H150S Datasheet
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• 100V/150A, RDS (ON) =3.8mΩ(Typ.)@VGS=10V • Advanced HEFET® Technology • Ultra Low On-Resistance • Excellent QgxRDS(on) Product • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) D G Applications • Motor Drives • Uninterruptible Power Supplies • DC/DC converter • General Purpose Applications Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TC=25°C Unless Otherwise Noted) en VDSS Drain-Source Voltage h VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current r Mounted on Large Heat Sink Fo IDP① 300μs Pulse Drain Current Tested S yTO263 Onl D Use G S N-Channel MOSFET Rating Unit TC=25°C 100 V ±25 175 °C -55 to 175 °C 150 A TC=25°C 600 A ID② Continuous Drain Current(VGS=10V) TC=25°C 150 A TC=100°C 106 PD Maximum Power Dissipation TC=25°C 200 W TC=100°C 100 RqJC Thermal Resistance-Junction to Case 0.75 °C/W RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed 225 mJ Shenzhen City Ruichips Semiconductor Co., Ltd Rev.
A– MAR., 2019 1 www.ruichips.com sales.Mr.wang13826508770 www.sztssd.com RUH1H150S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RUH1H150S Unit Min.
Typ.
sales.Mr.wang13826508770 www.sztssd.com RUH1H150S N-Channel Advanced Power.
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