RUH3051M - N-Channel Advanced Power MOSFET
D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar
RUH3051M Features
* 30V/50A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V
* Advanced HEFET® Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
