RUH3051M - N-Channel Advanced Power MOSFET

Ruichips

RUH3051M Datasheet Preview — Preview of RUH3051M PDF

Datasheet Details

Part number	RUH3051M
Manufacturer	Ruichips
File Size	331.81 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RUH3051M-Ruichips.pdf

RUH3051M Product details

Description

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N

Features

30V/50A, RDS (ON) =4.2mΩ(Typ. )@VGS=10V RDS (ON) =6mΩ(Typ. )@VGS=4.5V.
Advanced HEFET® Technology.
Ultra Low On-Resistance.
Excellent QgxRDS(on) Product.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

📁 RUH3051M Similar Datasheet

Other Datasheets by Ruichips

RUH3051L - N-Channel Advanced Power MOSFET
RUH30100M - N-Channel Advanced Power MOSFET
RUH3090L - N-Channel Advanced Power MOSFET
RUH30J30M - Dual N-Channel Advanced Power MOSFET
RUH30J51M - Dual Symmetric N-Channel MOSFET
RUH1H100R - N-Channel Advanced Power MOSFET

Published: Apr 10, 2017 |