RUH3090L Datasheet, Mosfet, Ruichips

RUH3090L Features

  • Mosfet
  • 30V/90A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V
  • Low On-Resistance
  • 100% avalanche tested
  • Reliable and Rugged
  • Lead Fr

PDF File Details

Part number:

RUH3090L

Manufacturer:

Ruichips

File Size:

415.64kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet. D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS

Datasheet Preview: RUH3090L 📥 Download PDF (415.64kb)
Page 2 of RUH3090L Page 3 of RUH3090L

RUH3090L Application

  • Applications
  • DC/DC Converters
  • On board power for server
  • Synchronous rectification Pin Description D G S TO252 D G Ab

TAGS

RUH3090L
N-Channel
Advanced
Power
MOSFET
Ruichips

📁 Related Datasheet

RUH30100M - N-Channel Advanced Power MOSFET (Ruichips)
RUH30100M N-Channel Advanced Power MOSFET Features • 30V/95A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance .

RUH3051L - N-Channel Advanced Power MOSFET (Ruichips)
RUH3051L N-Channel Advanced Power MOSFET Features • 30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi.

RUH3051M - N-Channel Advanced Power MOSFET (Ruichips)
RUH3051M N-Channel Advanced Power MOSFET Features • 30V/50A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Advanced HEFET® Technology .

RUH30J30M - Dual N-Channel Advanced Power MOSFET (Ruichips)
RUH30J30M Dual N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistan.

RUH30J51M - Dual Symmetric N-Channel MOSFET (Ruichips)
sales.Mr.wang13826508770 .sztssd. RUH30J51M Dual Symmetric N-Channel MOSFET Features • 30V/50A, RDS (ON) =3.6mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(.

RUH1H100R - N-Channel Advanced Power MOSFET (Ruichips)
RUH1H100R N-Channel Advanced Power MOSFET Features • 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V • Advanced HEFET® Technology • Ultra Low On-Resistance .

RUH1H150S - N-Channel Advanced Power MOSFET (Ruichips)
sales.Mr.wang13826508770 .sztssd. RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description • 100V/150A, RDS (ON) =3.8mΩ(Typ.)@VGS=.

RUH1H80M - N-Channel Advanced Power MOSFET (Ruichips)
RUH1H80M N-Channel Advanced Power MOSFET Features • 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance •.

RUH1H9H - N-Channel Advanced Power MOSFET (Ruichips)
RUH1H9H N-Channel Advanced Power MOSFET Features • 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V • Advanced HEFET® Technology • Ultra Low On-Resistance • Exc.

RUH40130R - N-Channel Advanced Power MOSFET (Ruichips)
RUH40130R N-Channel Advanced Power MOSFET Features • 40V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts