RUH30J51M - Dual Symmetric N-Channel MOSFET

Datasheet Summary

Description

G2S2 S2 S2 G1D1D1D1 S1/DD21 Applications DC/DC Converters On board power for server Synchronous rectification Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TC=25°C Unless Otherwise Noted) en VDSS h VGSS gs TJ n TSTG To IS Drain-Source Voltage

Features

30V/50A, RDS (ON) =3.6mΩ(Typ. )@VGS=10V RDS (ON) =5.5mΩ(Typ. )@VGS=4.5V.
Ultra Low On-Resistance.
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RUH30J51M
Manufacturer	Ruichips
File Size	801.86 KB
Description	Dual Symmetric N-Channel MOSFET
Datasheet	RUH30J51M Datasheet
Additional preview pages of the RUH30J51M datasheet.

📁 Similar Datasheet

Other Datasheets by Ruichips

RUH30J30M - Dual N-Channel Advanced Power MOSFET
RUH30100M - N-Channel Advanced Power MOSFET
RUH3051L - N-Channel Advanced Power MOSFET
RUH3051M - N-Channel Advanced Power MOSFET
RUH3090L - N-Channel Advanced Power MOSFET
RUH1H100R - N-Channel Advanced Power MOSFET
RUH1H150S - N-Channel Advanced Power MOSFET
RUH1H80M - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

sales.Mr.wang13826508770 www.sztssd.com RUH30J51M Dual Symmetric N-Channel MOSFET Features • 30V/50A, RDS (ON) =3.6mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.

Published: Jan 21, 2025 |