RUH3051L - N-Channel Advanced Power MOSFET

Ruichips

RUH3051L Datasheet Preview — Preview of RUH3051L PDF

Datasheet Details

Part number	RUH3051L
Manufacturer	Ruichips
File Size	623.89 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RUH3051L-Ruichips.pdf

RUH3051L Product details

Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source A

Features

30V/50A RDS (ON) =4.8mΩ(Typ. )@VGS=10V RDS (ON) =6.8mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

📁 RUH3051L Similar Datasheet

Other Datasheets by Ruichips

RUH3051M - N-Channel Advanced Power MOSFET
RUH30100M - N-Channel Advanced Power MOSFET
RUH3090L - N-Channel Advanced Power MOSFET
RUH30J30M - Dual N-Channel Advanced Power MOSFET
RUH30J51M - Dual Symmetric N-Channel MOSFET
RUH1H100R - N-Channel Advanced Power MOSFET

Published: Apr 10, 2017 |