RUH3051L - N-Channel Advanced Power MOSFET
D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300
RUH3051L Features
* 30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* Fast Switching Speed
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
