RUH3051L Datasheet - Ruichips

RUH3051L N-Channel Advanced Power MOSFET

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300.

RUH3051L Features

* 30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* Fast Switching Speed

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

RUH3051L-Ruichips.pdf