RUH30J30M - Dual N-Channel Advanced Power MOSFET

Ruichips

RUH30J30M Datasheet Preview — Preview of RUH30J30M PDF

Datasheet Details

Part number	RUH30J30M
Manufacturer	Ruichips
File Size	418.37 KB
Description	Dual N-Channel Advanced Power MOSFET
Datasheet	RUH30J30M-Ruichips.pdf

RUH30J30M Product details

Description

G2S2 S2 S2 G1D1D1D1 PDFN5 6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ She

Features

30V/30A, RDS (ON) =6mΩ(Typ. )@VGS=10V RDS (ON) =9.5mΩ(Typ. )@VGS=4.5V.
Ultra Low On-Resistance.
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Jan 8, 2019 |