RUH30J30M Datasheet - Ruichips

RUH30J30M Dual N-Channel Advanced Power MOSFET

G2S2 S2 S2 G1D1D1D1 PDFN5 *6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar.

RUH30J30M Features

* 30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V

* Ultra Low On-Resistance

* Fast Switching Speed

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC/DC Converters

* On board p

RUH30J30M-Ruichips.pdf

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Datasheet Details

Part number:

RUH30J30M

Manufacturer:

Ruichips

File Size:

418.37 KB

Description:

Dual n-channel advanced power mosfet.

RUH30J30M Distributor

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RUH30J30M RUH30J30M Dual N-Channel Advanced Power MOSFET Ruichips