RUH30J30M - Dual N-Channel Advanced Power MOSFET
G2S2 S2 S2 G1D1D1D1 PDFN5 *6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar
RUH30J30M Features
* 30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V
* Ultra Low On-Resistance
* Fast Switching Speed
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* DC/DC Converters
* On board p
