K7A163630B datasheet, sram equivalent, SAMSUNG ELECTRONICS

K7A163630B Features and benefits

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Contro.

K7A163630B Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

K7A163630B Description

The K7A163630B and K7A161830B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(18) bits and integrates address an.

Image gallery

TAGS

📁 Related Datasheet

K7A163631B - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE (Samsung semiconductor)
K7A163631B K7A161831B www..com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS comp.

K7A163600A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
K7A163600A K7A163200A K7A161800A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst.

K7A163601A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst S.

K7A163200A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
K7A163600A K7A163200A K7A161800A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst.

K7A163201A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst S.

K7A161800A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
K7A163600A K7A163200A K7A161800A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst.

K7A161801A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)
K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst S.

K7A161830B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
K7A163630B K7A161830B www..com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compl.

K7A161831B - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE (Samsung semiconductor)
K7A163631B K7A161831B www..com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS comp.

K7A163630B Datasheet, sram equivalent, SAMSUNG ELECTRONICS

PDF File Details

K7A163630B Features and benefits

K7A163630B Application

K7A163630B Description