Datasheet Details
- Part number
- K7A163631B
- Manufacturer
- Samsung semiconductor
- File Size
- 405.57 KB
- Datasheet
- K7A163631B_Samsungsemiconductor.pdf
- Description
- 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
K7A163631B Description
K7A163631B K7A161831B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.SRAM Specification 100TQFP with Pb & Pb-Free (RoHS comp.
The K7A163631B and K7A161831B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.
K7A163631B Features
* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
K7A163631B Applications
* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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