K7A163631B - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K7A163631B
Manufacturer	Samsung semiconductor
File Size	405.57 KB
Description	18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
Datasheet	K7A163631B Datasheet
Additional preview pages of the K7A163631B datasheet.

Product details

Description

The K7A163631B and K7A161831B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 2.5 or 3.3V +/- 5% Power Supply.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows a choice of either a interleaved burst.

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Published: Apr 27, 2010 |