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K7A65D - Silicon N-Channel MOSFET

K7A65D Description

TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A65D Switching Regulator Applications * Low drain-source ON-re.

K7A65D Applications

* Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ. )
* High forward transfer admittance: |Yfs| = 4.5 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2

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Silicon N-Channel MOSFET Toshiba
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