* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
K7A161830B Datasheet (400.32 KB)
K7A161830B
SAMSUNG ELECTRONICS
400.32 KB
512kx36 & 1mx18 synchronous sram.
K7A163630B K7A161830B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compl.
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