K7A161830B Datasheet - SAMSUNG ELECTRONICS

K7A161830B 512Kx36 & 1Mx18 Synchronous SRAM

The K7A163630B and K7A161830B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter.

K7A163630B K7A161830B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVID.

K7A161830B Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 2.5 or 3.3V +/- 5% Power Supply.

* 5V Tolerant Inputs Except I/O Pins.

K7A161830B Datasheet (400.32 KB)

K7A161830B Datasheet Preview — Preview of K7A161830B PDF

Datasheet Details

Part number:

K7A161830B

Manufacturer:

SAMSUNG ELECTRONICS

File Size:

400.32 KB

Description:

512kx36 & 1mx18 synchronous sram.

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K7A161830B 512Kx36 1Mx18 Synchronous SRAM SAMSUNG ELECTRONICS

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