K7A161831B, K7A163631B Datasheet - Samsung semiconductor

K7A161831B, K7A163631B, 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

K7A163631B K7A161831B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.SRAM Specification 100TQFP with Pb & Pb-Free (RoHS comp.
The K7A163631B and K7A161831B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

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K7A163631B_Samsungsemiconductor.pdf

K7A161831B Datasheet Preview — This datasheet PDF includes multiple part numbers: K7A161831B, K7A163631B. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K7A161831B, K7A163631B

Manufacturer:

Samsung semiconductor

File Size:

405.57 KB

Description:

18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

Note:

This datasheet PDF includes multiple part numbers: K7A161831B, K7A163631B.
Please refer to the document for exact specifications by model.

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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