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K7A50D Datasheet - Toshiba Semiconductor

K7A50D TK7A50D

TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain cur.

K7A50D Features

* act (“Unintended Use”). Unintended

K7A50D Datasheet (195.86 KB)

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Datasheet Details

Part number:

K7A50D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

195.86 KB

Description:

tk7a50d.

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K7A50D TK7A50D Toshiba Semiconductor

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