Datasheet4U Logo Datasheet4U.com

K7A60W Datasheet - Toshiba

TK7A60W

K7A60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK7A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute

K7A60W Datasheet (237.75 KB)

Preview of K7A60W PDF

Datasheet Details

Part number:

K7A60W

Manufacturer:

Toshiba ↗

File Size:

237.75 KB

Description:

Tk7a60w.

📁 Related Datasheet

K7A65D Silicon N-Channel MOSFET (Toshiba)

K7A161800A 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

K7A161801A 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

K7A161830B 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)

K7A161831B 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE (Samsung semiconductor)

K7A163200A 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

K7A163200A 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

K7A163201A 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

K7A163600A 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

K7A163601A 512K x 36 / 32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

TAGS

K7A60W TK7A60W Toshiba

Image Gallery

K7A60W Datasheet Preview Page 2 K7A60W Datasheet Preview Page 3

K7A60W Distributor