HED57XXU12 Datasheet - SAMSUNG

HED57XXU12 Low Power Hall-Effect Switch

The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology. It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power .

SPECIFICATION MODEL : HED57XXU12 www.DataSheet4U.com Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W. PARK 2006.9.19 S.W. KIM 2006.9.19 H.C. JOUNG 2006.9.19 SAMSUNG ELECTRO-MECHANICS CO.,LTD. 314,Maetan 3-Dong,Yeongtong-Gu,Suwon, Kyunggi-Do,KOREA,443-743 HED57XXU12(060919) Rev.0 Page 1/17 Revision history (Model : HED57XXU12) Date 2006.9.19 Rev. No 0 Contents revised Establishment Design S.W.Park Approval H.C.Joung www.DataSheet4U.com HED57XXU12(060919) Rev.0 Pag.

HED57XXU12_SAMSUNG.pdf