HED57XXU12 Datasheet - SAMSUNG

HED57XXU12, Low Power Hall-Effect Switch

SPECIFICATION MODEL : HED57XXU12 www.DataSheet4U.com Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W.PARK 2006.9.19 S.W.KIM 2.
The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology.

HED57XXU12_SAMSUNG.pdf

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Datasheet Details

Part number:

HED57XXU12

Manufacturer:

SAMSUNG

File Size:

473.08 KB

Description:

Low Power Hall-Effect Switch

Applications

* requiring extended operating lifetime in battery powered systems. www. DataSheet4U. com The output transistor of the HED57XXU12 is switched on (BOP) in the presence of a sufficiently strong South or North magnetic field. The output is switched off (BRP) in the absence of a magnetic field. 2. Specif

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HED57XXU12 Low Power Hall-Effect Switch SAMSUNG

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