Part number:
M36000
Manufacturer:
SGS
File Size:
154.91 KB
Description:
Rom.
INTEGRATED CIRCUIT
M 36000
PRELIMINARY DATA
IT READ ONLY MEMORY
8K x 8 ORGANIZATION - EDGE ENABLED OPERATION (CE) 250 ns ACCESS TIME, 375 ns CYCLE T.
M36000
SGS
154.91 KB
Rom.
INTEGRATED CIRCUIT
M 36000
PRELIMINARY DATA
IT READ ONLY MEMORY
8K x 8 ORGANIZATION - EDGE ENABLED OPERATION (CE) 250 ns ACCESS TIME, 375 ns CYCLE T.
📁 Related Datasheet
M3604A - HIGH-SPEED PROM
(Intel Corporation)
..
.
M3624A - HIGH-SPEED PROM
(Intel Corporation)
..
.
M3625A - 4K PROM
(Intel)
.
M366S0823CT0 - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CT0
M366S0823CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENER.
M366S0823CTF - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CTF
M366S0823CTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERA.
M366S0823CTL - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CTL
M366S0823CTL SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERA.
M366S0823CTS - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CTS
M366S0823CTS SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENER.
M366S0823DTF - SDRAM DIMM
(Samsung Semiconductor)
M366S0823DTF
M366S0823DTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERA.