* l) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf = 1/1 1
M366S0823CTL Datasheet (118.59 KB)
M366S0823CTL
Samsung Semiconductor
118.59 KB
Sdram dimm.
M366S0823CTL
M366S0823CTL SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERA.
📁 Related Datasheet
M366S0823CT0 - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CT0
M366S0823CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENER.
M366S0823CTF - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CTF
M366S0823CTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERA.
M366S0823CTS - SDRAM DIMM
(Samsung Semiconductor)
M366S0823CTS
M366S0823CTS SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENER.
M366S0823DTF - SDRAM DIMM
(Samsung Semiconductor)
M366S0823DTF
M366S0823DTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERA.
M366S0823DTS - SDRAM DIMM
(Samsung Semiconductor)
SERIAL PRESENCE DETECT
PC133 Unbuffered DIMM
PC133 Single Sided Unbuffered SDRAM DIMM(168pin) SPD Specification
REV. 1.3 March. 2000
REV. 1.3 March.
M366S0823ETS - SDRAM DIMM
(Samsung Semiconductor)
M366S0823ETS
M366S0823ETS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD.
M366S0823FTS - SDRAM DIMM
(Samsung Semiconductor)
M366S0823FTS
M366S0823FTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD.
M366S0824CT0 - SDRAM DIMM
(Samsung Semiconductor)
M366S0824CT0
M366S0824CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENE.
