M366S0823CTL Datasheet - Samsung Semiconductor

M366S0823CTL SDRAM DIMM

The Samsung M366S0823CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CTL consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF decou.

M366S0823CTL Features

* l) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf = 1/1 1

M366S0823CTL_SamsungSemiconductor.pdf