* f = 1/1 1.4 See Fig. 2 Vtt = 1.4V AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Unit V V ns V 1200Ω Output 870Ω
* 50pF VOH (DC) = 2.4V, IOH
M366S0823ETS Datasheet (150.57 KB)
M366S0823ETS
Samsung Semiconductor
150.57 KB
Sdram dimm.
M366S0823ETS M366S0823ETS SDRAM DIMM PC133/PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD.
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