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M366S1623DT0 Datasheet - Samsung semiconductor

M366S1623DT0 PC100 Unbuffered DIMM

The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF dec.

M366S1623DT0 Features

* active) Operating current (Burst mode) Refresh current Self refresh current ICC4 1,080 960 960 mA 1 ICC5 ICC6 1,240 1,200 16 1,200 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unle

M366S1623DT0_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

M366S1623DT0

Manufacturer:

Samsung semiconductor

File Size:

116.30 KB

Description:

Pc100 unbuffered dimm.

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