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M366S1623ET0 - Synchronous DRAMs

Datasheet Summary

Description

The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S1623ET0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • asured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). REV. 0.0 Dec, 2000 M366S1623ET0 AC.

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Datasheet Details

Part number M366S1623ET0
Manufacturer Samsung semiconductor
File Size 143.42 KB
Description Synchronous DRAMs
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www.DataSheet4U.com M366S1623ET0 Revision History Revision 0.0 (Dec, 2000) • PC133 first published. PC133 Unbuffered DIMM REV. 0.0 Dec, 2000 M366S1623ET0 M366S1623ET0 SDRAM DIMM PC133 Unbuffered DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623ET0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.
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