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M366S1623DT0 - PC100 Unbuffered DIMM

Datasheet Summary

Description

The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • active) Operating current (Burst mode) Refresh current Self refresh current ICC4 1,080 960 960 mA 1 ICC5 ICC6 1,240 1,200 16 1,200 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unle.

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Datasheet Details

Part number M366S1623DT0
Manufacturer Samsung semiconductor
File Size 116.30 KB
Description PC100 Unbuffered DIMM
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www.DataSheet4U.com M366S1623DT0 M366S1623DT0 SDRAM DIMM PC100 Unbuffered DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S1623DT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.
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