* asured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). REV. 0.0 Dec, 2000 M366S1623ET0 AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
M366S1623ET0 Datasheet (143.42 KB)
M366S1623ET0
Samsung semiconductor
143.42 KB
Synchronous drams.
www.DataSheet4U.com M366S1623ET0 Revision History Revision 0.0 (Dec, 2000) PC133 first published. PC133 Unbuffered DIMM REV. 0.0 Dec, 200.
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