M366S1623ET0 Datasheet - Samsung semiconductor

M366S1623ET0, Synchronous DRAMs

www.DataSheet4U.com M366S1623ET0 Revision History Revision 0.0 (Dec, 2000) * PC133 first published.PC133 Unbuffered DIMM REV.0.0 Dec, 200.
The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

M366S1623ET0_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

M366S1623ET0

Manufacturer:

Samsung semiconductor

File Size:

143.42 KB

Description:

Synchronous DRAMs

Features

* asured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). REV. 0.0 Dec, 2000 M366S1623ET0 AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)

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M366S1623ET0 Synchronous DRAMs Samsung semiconductor

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