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M366S1623ET0 - Synchronous DRAMs

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Samsung semiconductor

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M366S1623ET0 Synchronous DRAMs by Samsung semiconductor - Datasheet Preview — Datasheet preview – M366S1623ET0

Datasheet Details

Part number	M366S1623ET0
Manufacturer	Samsung semiconductor
File Size	143.42 KB
Description	Synchronous DRAMs
Datasheet	M366S1623ET0 Datasheet
Additional preview pages of the M366S1623ET0 datasheet.

Product details

Description

The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

Features

asured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). REV. 0.0 Dec, 2000 M366S1623ET0 AC.

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Published: Dec 19, 2006 |