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M366S1623ET0 Datasheet - Samsung semiconductor

M366S1623ET0 - Synchronous DRAMs

The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623ET0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF dec.

M366S1623ET0 Features

* asured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). REV. 0.0 Dec, 2000 M366S1623ET0 AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)

M366S1623ET0_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

M366S1623ET0

Manufacturer:

Samsung semiconductor

File Size:

143.42 KB

Description:

Synchronous drams.

M366S1623ET0 Distributor

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M366S1623ET0 Synchronous DRAMs Samsung semiconductor