Datasheet Specifications
- Part number
- M366S1623ET0
- Manufacturer
- Samsung semiconductor
- File Size
- 143.42 KB
- Datasheet
- M366S1623ET0_Samsungsemiconductor.pdf
- Description
- Synchronous DRAMs
Description
www.DataSheet4U.com M366S1623ET0 Revision History Revision 0.0 (Dec, 2000) * PC133 first published.PC133 Unbuffered DIMM REV.0.0 Dec, 200.
Features
* asured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). REV. 0.0 Dec, 2000 M366S1623ET0 AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)M366S1623ET0 Distributors
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