SLP3N80C Datasheet - SL SEMI

SLP3N80C - N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

SLP3N80C Features

* 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V

* Low gate charge ( typical 15nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC

SLP3N80C-SLSEMI.pdf