SLP32N20C Datasheet - Maple Semiconductor

SLP32N20C 200V N-Channel MOSFET

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices .

SLP32N20C Features

* - 32A, 200V, RDS(on) typ. = 0.080Ω@VGS = 10 V - Low gate charge ( typical 50 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP32N20C SLF32N20C VDSS ID IDM VGSS EAS IAR EAR dv/

SLP32N20C-MapleSemiconductor.pdf