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SLP10N60C - N-Channel MOSFET

SLP10N60C Description

SLP10N60C / SLF10N60C SLP10N60C / SLF10N60C 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLP10N60C Features

* - 10A, 600V, RDS(on)typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 36.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60C SLF10N60C

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