SLP10N60C

N-Channel MOSFET

Maple Semiconductor

SLP10N60C Features

* - 10A, 600V, RDS(on)typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 36.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60C SLF10N60C

SLP10N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP10N60C Datasheet (1.18 MB)

SLP10N60C Datasheet Preview — Preview of SLP10N60C PDF

Datasheet Details

Part number:

SLP10N60C

Manufacturer:

Maple Semiconductor

File Size:

1.18 MB

Description:

N-channel mosfet.

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SLP10N60C N-Channel MOSFET Maple Semiconductor

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SLP10N60C Features

SLP10N60C General Description

Datasheet Details

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Description:

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