SLP10N80CZ

N-Channel MOSFET

Maple Semiconductor

SLP10N80CZ Features

* - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Param

SLP10N80CZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP10N80CZ Datasheet (397.39 KB)

SLP10N80CZ Datasheet Preview — Preview of SLP10N80CZ PDF

Datasheet Details

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SLP10N80CZ

Manufacturer:

Maple Semiconductor

File Size:

397.39 KB

Description:

N-channel mosfet.

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SLP10N80CZ N-Channel MOSFET Maple Semiconductor

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SLP10N80CZ Features

SLP10N80CZ General Description

Datasheet Details

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