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SLP10N65S

N-Channel MOSFET

SLP10N65S Features

* - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N65S SLF10N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt

SLP10N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP10N65S Datasheet (691.04 KB)

Preview of SLP10N65S PDF

Datasheet Details

Part number:

SLP10N65S

Manufacturer:

Maple Semiconductor

File Size:

691.04 KB

Description:

N-channel mosfet.

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SLP10N65S N-Channel MOSFET Maple Semiconductor

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