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SLP10N70C

N-Channel MOSFET

SLP10N70C Features

* - 10A, 700V, RDS(on) typ. = 0.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N70C SLF10N70C V

SLP10N70C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP10N70C Datasheet (343.62 KB)

Preview of SLP10N70C PDF

Datasheet Details

Part number:

SLP10N70C

Manufacturer:

Maple Semiconductor

File Size:

343.62 KB

Description:

N-channel mosfet.

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SLP10N70C N-Channel MOSFET Maple Semiconductor

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