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SLP12N65C - 650V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 12A, 650V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220C G D S TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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Datasheet Details

Part number SLP12N65C
Manufacturer Msemitek
File Size 1.89 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet SLP12N65C Datasheet
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Full PDF Text Transcription

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SLF12N65C/SLP12N65C SLF12N65C/SLP12N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 12A, 650V, RDS(on) = 0.
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