Datasheet Details
Part number:
SLP12N65S
Manufacturer:
Maple Semiconductor
File Size:
345.50 KB
Description:
N-Channel MOSFET
Features
* - 12A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65S SLF12N65S VDSS ID IDM VGSS EAS IAR EAR dv/d
SLP12N65S-MapleSemiconductor.pdf
SLP12N65S, N-Channel MOSFET
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices
SLP12N65S Distributor
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