SLP12N65S Datasheet - Maple Semiconductor

SLP12N65S N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP12N65S Features

* - 12A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65S SLF12N65S VDSS ID IDM VGSS EAS IAR EAR dv/d

SLP12N65S-MapleSemiconductor.pdf