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SLP12N60UZ - N-Channel MOSFET

Maple Semiconductor

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Datasheet Details

Part number: SLP12N60UZ
Manufacturer: Maple Semiconductor
File Size: 1.31 MB
Datasheet: SLP12N60UZ-MapleSemiconductor.pdf
Description: N-Channel MOSFET

SLP12N60UZ Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

Features

- 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (No.

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N-Channel MOSFET Maple Semiconductor

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