Datasheet Details
Part number:
SLP12N60UZ
Manufacturer:
Maple Semiconductor
File Size:
1.31 MB
Description:
N-Channel MOSFET
Features
* - 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDS
SLP12N60UZ-MapleSemiconductor.pdf
SLP12N60UZ, N-Channel MOSFET
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices
SLP12N60UZ Distributor
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