SLP12N60UZ Datasheet - Maple Semiconductor

SLP12N60UZ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP12N60UZ Features

* - 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDS

SLP12N60UZ-MapleSemiconductor.pdf