SLP12N60UZ

N-Channel MOSFET

Maple Semiconductor

SLP12N60UZ Features

* - 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDS

SLP12N60UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP12N60UZ Datasheet (1.31 MB)

SLP12N60UZ Datasheet Preview — Preview of SLP12N60UZ PDF

Datasheet Details

Part number:

SLP12N60UZ

Manufacturer:

Maple Semiconductor

File Size:

1.31 MB

Description:

N-channel mosfet.

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SLP12N60UZ N-Channel MOSFET Maple Semiconductor

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SLP12N60UZ Features

SLP12N60UZ General Description

Datasheet Details

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Description:

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