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SLP10N65C

N-Channel MOSFET

SLP10N65C Features

* - 10A, 650V, RDS(on) typ. = 0.678Ω@VGS = 10 V - Low gate charge ( typical 38nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N65C SLF10N65C

SLP10N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP10N65C Datasheet (1.15 MB)

Preview of SLP10N65C PDF

Datasheet Details

Part number:

SLP10N65C

Manufacturer:

Maple Semiconductor

File Size:

1.15 MB

Description:

N-channel mosfet.

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TAGS

SLP10N65C N-Channel MOSFET Maple Semiconductor

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