SVF2N60MG

600V N-CHANNEL MOSFET

SVF2N60MG Features

* ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF2N60M SVF2N60MG SVF2N60MJ SVF2N60N SVF2N60NF SVF2N60F SVF2N60FG SVF2N60T Package Type TO-251D-3L TO-251D-3L TO-251J-3L TO-126-3L TO-126F-3L

SVF2N60MG General Description

SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resist.

SVF2N60MG Datasheet (516.56 KB)