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SVF2N60RM, SVF2N60RD Datasheet - Silan Microelectronics

Datasheet Details

Part number:

SVF2N60RM, SVF2N60RD

Manufacturer:

Silan Microelectronics

File Size:

366.96 KB

Description:

600V N-CHANNEL MOSFET

Note:

This datasheet PDF includes multiple part numbers: SVF2N60RM, SVF2N60RD.
Please refer to the document for exact specifications by model.

Features

*  2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L NOMENCLATURE Silan VDMOS Code of F-Cell process SVF XNXXRX Package information. Example: FJH: TO-220FJH; F:

SVF2N60RD-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF2N60RM, SVF2N60RD. Please refer to the document for exact specifications by model.
SVF2N60RM Datasheet Preview Page 2 SVF2N60RM Datasheet Preview Page 3

SVF2N60RM, SVF2N60RD, 600V N-CHANNEL MOSFET

SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching

SVF2N60RM Distributor

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