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S3M0040120N - 1200V SIC POWER MOSFET

Datasheet Summary

Description

S3M0040120N is single SiC Power MOSFET packaged in SOT-227 case.

The device is a high voltage n-channel Enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes.

Features

  • Positive temperature characteristics, easy to parallel.
  • Low on-resistance Typ. RDS(on) = 40mΩ.
  • Fast switching speed and low switching losses.
  • Very fast and robust intrinsic body diode.
  • Process of non-bright Tin electroplatin.

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Datasheet Details

Part number S3M0040120N
Manufacturer SMC Diode
File Size 1.99 MB
Description 1200V SIC POWER MOSFET
Datasheet download datasheet S3M0040120N Datasheet
Additional preview pages of the S3M0040120N datasheet.

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Full PDF Text Transcription

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S3M0040120N Technical Data Data Sheet N2800, REV.- S3M0040120N 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 65 A RDS(on) = 40 mΩ Description S3M0040120N is single SiC Power MOSFET packaged in SOT-227 case. The device is a high voltage n-channel Enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3M0040120N is ideal for energy sensitive, high frequency applications in challenging environments. Circuit Diagram Features • Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 40mΩ. • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode.
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