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S outh S ea S emiconductor
SSS
ID
11A
S S M4410
J an 04 2005 ver1.2
N-C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 30V
F E AT UR E S
( m W ) Max
R DS (ON)
S uper high dense cell design for low R DS (ON ).
10 @ V G S = 10V 18 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 11 39 1.7 2.
SSM4410 Datasheet
