M29W008AT Datasheet - ST Microelectronics

M29W008AT 8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory

The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be.

M29W008AT M29W008AB 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte Status Register bits and Ready/Busy Output s s s s s s SECURITY PROTECTION MEMORY AREA INSTRUCTIONS ADDRESS CODING: 3 digits MEMORY BLOCKS Boot Block (Top or Bottom location) Parameter and Main bl.

M29W008AT Features

* coders and sense amplifiers. E High deselects the memory and reduces the power consumption to

M29W008AT_STMicroelectronics.pdf

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Datasheet Details

Part number:

M29W008AT

Manufacturer:

STMicroelectronics ↗

File Size:

218.02 KB

Description:

8 mbit 1mb x8 / boot block low voltage single supply flash memory.

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M29W008AT M29W008AT Mbit 1Mb Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

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