M29W008B Datasheet - ST Microelectronics

M29W008B 8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory

The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be .

M29W008T M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W008T and M29W008B are replaced respectively by the M29W008AT and M29W008AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte Status Register bits and Ready/Busy Output MEMORY BLOCKS Boot Block (Top or Bottom location) P.

M29W008B Features

* FFFFh 64K MAIN BLOCK 00000h AI02135 Byte-Wide FFFFFh FC000h FBFFFh 8K PARAMETER BLOCK FA000

M29W008B_STMicroelectronics.pdf

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Datasheet Details

Part number:

M29W008B

Manufacturer:

STMicroelectronics ↗

File Size:

219.24 KB

Description:

8 mbit 1mb x8 / boot block low voltage single supply flash memory.

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M29W008B M29W008B Mbit 1Mb Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

M29W008B Distributor