M58PR512LE, M58PR001LE - (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal

ST Microelectronics

Datasheet Details

Part number	M58PR512LE, M58PR001LE
Manufacturer	STMicroelectronics
File Size	1.01 MB
Description	(M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal
Datasheet	M58PR001LE_STMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: M58PR512LE, M58PR001LE. Please refer to the document for exact specifications by model.

. . . .

Supply voltage.
VDD = 1.7 V to 2.0 V for program, erase and read.
VDDQ = 1.7 V to 2.0 V for I/O buffers.
VPP = 9 V for fast program Synchronous/asynchronous read.
Synchronous burst read mode: 108 MHz, 66 MHz.
Asynchronous page read mode.
Random access: 96 ns Programming time.
4.2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
Multiple bank memory array: 32 Mbit banks (2.

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Other Datasheets by ST Microelectronics

M58PR001LE - (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal
M58PR256LE - (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal
M58BF008 - 8 Mbit 256Kb x32 / Burst Flash Memory
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Published: Oct 31, 2007 |