ST13007D Datasheet - ST Microelectronics

ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IC ICM IB.

® ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE s HIGH VOLTAGE CAPABILITY s INTEGRATED FREE-WHEELING DIODE s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC s LARGE RBSOA APPLICATIONS s UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER S.

ST13007D_STMicroelectronics.pdf