Datasheet Details
Part number:
STB22NM60N
Manufacturer:
File Size:
573.25 KB
Description:
Power MOSFET
Features
* Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 16 A 16 A 16 A 16 A 16 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resis
STB22NM60N_STMicroelectronics.pdf
STB22NM60N, Power MOSFET
These devices are made using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficienc
STB22NM60N Distributor
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