STB22NM60N Datasheet - ST Microelectronics

STB22NM60N Power MOSFET

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficienc.

STB22NM60N Features

* Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 16 A 16 A 16 A 16 A 16 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resis

STB22NM60N_STMicroelectronics.pdf