STB4N62K3 Datasheet - ST Microelectronics

STB4N62K3 N-Channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitabl.

STB4N62K3 Features

* TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacit

STB4N62K3_STMicroelectronics.pdf