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STB4NC80Z-1, STB4NC80Z Datasheet - STMicroelectronics

STB4NC80Z_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STB4NC80Z-1, STB4NC80Z. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STB4NC80Z-1, STB4NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

445.83 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: STB4NC80Z-1, STB4NC80Z.
Please refer to the document for exact specifications by model.

STB4NC80Z-1, STB4NC80Z, N-CHANNEL MOSFET

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet

STB4NC80Z-1 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

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