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STB45N10L Datasheet - ST Microelectronics

STB45N10L N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STB45N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB45N10L s s s s s s s s V DSS 100 V R DS(on) < 0.036 Ω ID 45 A s s TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE LOW LEAKAGE CURRENT APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN T.

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Datasheet Details

Part number:

STB45N10L

Manufacturer:

STMicroelectronics ↗

File Size:

87.34 KB

Description:

N-channel enhancement mode power mos transistor.

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STB45N10L STB45N10L N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics

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