STB45N60DM2AG Datasheet - STMicroelectronics

N-channel Power MOSFET

STB45N60DM2AG Features

* Order code STB45N60DM2AG VDS @ TJ max. 650 V RDS(on) max. 93 mΩ ID 34 A PTOT 250 W

* AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt

STB45N60DM2AG General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift.

STB45N60DM2AG Datasheet (400.77 KB)

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Datasheet Details

Part number:

STB45N60DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

400.77 KB

Description:

N-channel power mosfet.
STB45N60DM2AG Datasheet Automotive-grade N-channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) .

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STB45N60DM2AG N-channel Power MOSFET STMicroelectronics

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STB45N60DM2AG Features

STB45N60DM2AG General Description

Datasheet Details

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Description:

STB45N60DM2AG Distributor