STB5NA80 Datasheet (ST Microelectronics)

STB5NA80, N-CHANNEL POWER MOSFET

www.DataSheet4U.com STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B5NA80 s s s s s s s V DSS 800 V R DS(on) < 2.4 Ω ID 4.7 A s s TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR