STB50N25M5 Datasheet - STMicroelectronics

N-Channel Power MOSFET

STB50N25M5 Features

* Type VDSS RDS(on) max ID TAB STB50N25M5 250 V < 0.075 Ω 28 A t(s)

* Amongst the best RDS(on)

* area c

* High dv/dt capability du

* Excellent switching performance ro

* Easy to drive P

* 100% avalanche tested lete Application so

* Switching applications - Ob Descr

STB50N25M5 General Description

t(s) This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical process technology, which is combined u with STMicroelectronics’ well-known rod PowerMESH™ horizontal layout structure. The resulting product has extremely low on- P resistance, which is unmatched a.

STB50N25M5 Datasheet (904.77 KB)