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STB50NE10L N-Channel Power MOSFET

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Description

® STB50NE10L N - CHANNEL 100V - 0.020Ω - 50A - D2PAK STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STB50NE10L 100 V <0.025 Ω 50 A s TYPICAL R.
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process.

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Applications

* s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR VGS ID ID Drain- gate Voltage (RGS = 20 kΩ) Gate-source Volt

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