STB51N60DM6 - N-channel Power MOSFET

STMicroelectronics

STB51N60DM6 Datasheet Preview — Preview of STB51N60DM6 PDF

Datasheet Details

Part number	STB51N60DM6
Manufacturer	STMicroelectronics ↗
File Size	732.60 KB
Description	N-channel Power MOSFET
Datasheet	STB51N60DM6-STMicroelectronics.pdf

STB51N60DM6 Product details

Description

S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Product status link STB51N60DM6 Product summary Order code

Features

Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A.
Fast-recovery body diode.
Lower RDS(on) per area vs previous generation.
Low gate charge, input capacitance and resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.
Zener-protected.

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Published: Mar 4, 2024 |