STB51N60DM6 Datasheet - STMicroelectronics

STB51N60DM6 N-channel Power MOSFET

S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effe.

STB51N60DM6 Features

* Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

STB51N60DM6-STMicroelectronics.pdf