STB51N60DM6 N-channel Power MOSFET

STMicroelectronics

Description

Prerelease product(s) STB51N60DM6 Datasheet N-channel 600 V, 70 mΩ typ., 36 A, MDmesh DM6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) .
S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

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Datasheet Specifications

Part number: STB51N60DM6
Manufacturer: STMicroelectronics ↗
File Size: 732.60 KB
Datasheet: STB51N60DM6-STMicroelectronics.pdf
Description: N-channel Power MOSFET

Features

* Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate charge, input capacitance and resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness

Applications

* G(1)

STB51N60DM6 Distributors

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STB51N60DM6 N-channel Power MOSFET STMicroelectronics

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